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The silicon N-channel Enhanced VDMOSFET,is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-227B, which accords with the RoHS standard.
Features ESD Improved Capability | Applications Power switch circuit of POWER |
QgType VRRM ID(cont)Chip
Tc=25℃
ARDS(on)
Tc=25℃
ΩCiss
typ
A
nCtrr
typ
nsRthJC
K/WPD
WFig.
No.DKFN 40N90P 900 33 0.21 14000 230 300 0.18 695 SOT-227B DKFN 52N90P 900 43 0.16 19000 308 300 0.14 890 SOT-227B DKFN 56N90P 900 56 0.145 23000 375 300 0.125 1000 SOT-227B DKFN 26N100P 1000 23 0.39 11900 197 300 0.21 595 SOT-227B DKFN 32N100P 1000 27 0.32 14200 225 300 0.18 690 SOT-227B DKFN 44N100P 1000 37 0.22 19000 305 300 0.14 890 SOT-227B DKFN 38N100P 1000 38 0.21 24000 350 300 0.125 1000 SOT-227B DKFN 40N110P 1100 34 0.26 19000 310 300 0.14 890 SOT-227B DKFN 20N120P 1200 20 0.57 11100 193 300 0.21 595 SOT-227B DKFN 26N120P 1200 23 0.46 14000 225 300 0.18 695 SOT-227B DKFN 30N120P 1200 30 0.35 19000 310 300 0.14 890 SOT-227B DKFN 32N120P 1200 32 0.31 21000 360 300 0.125 1000 SOT-227B
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Our Main Products include: Rectifier Diodes & Thyristor & relevant rectifying devices; Power module, Bridge rectifier, Press-fit Diode, Solid state relay, Intelligent module, Heatsink, Welding machine device, Rectifier equipments, Switch power supply etc
