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Silicon Carbide Schottky Diodes
Silicon Carbide Schottky Diodes

Silicon Carbide Schottky Diodes

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+86-13477062528

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sales@semiduken.com

DESCRIPTION

This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C, greatly suitable for applications where needs to improve efficiency, reliability, and thermal management.

Features

Positive temperature coefficient for safe operation and ease of paralleling

AEC-Q101 qualified

175 °C maximum operating junction temperature

Excellent surge capability

Extremely fast, temperature-independent switching behavior

Compared to Si bipolar diodes,greatly reduced the losses of switching



Applications

Boost diodes in PFC or DC/DC stages

Solar inverters

Switch-mode power supplies

Industrial motor drives

EV charging stations

Uninterruptible power supplies






Type

IF(AV)

VFM

VRRM

IRRM

Rjc

Trr

Unit

A

V

V

mA

℃/W

ns

MURP100A

100

≤1.1

25~200

≤2

≤0.2

≤100

MURP200A

200

≤1.1

25~200

≤2

≤0.1

≤150

MURP300A

300

≤1.1

25~200

≤2

≤0.08

≤150

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Power Solution supplier

Our Main Products include: Rectifier Diodes & Thyristor & relevant rectifying devices; Power module, Bridge rectifier, Press-fit Diode, Solid state relay, Intelligent module, Heatsink, Welding machine device, Rectifier equipments, Switch power supply etc

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