Igbt Transistor

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DESCRIPTION

Insulated gate bipolar transistors or IGBTs are a form of discrete semiconductor device that are generally used for power applications: power supplies, power switching, etc.

The advantage of IGBT transistors is that they combine many of the features of MOSFETs and bipolar transistors providing the high voltage and current handling capabilities of bipolar transistors with the high-speed switching and low gate current performance of power MOSFETs.

Type	VCES(V)	IC@100°C (A)	VCE(sat)@25°C (V)	tf@25°C (ns)	Eoff@25°C (mJ)	VF@25°C(V)	Package
DKG15N60P	650	15	1.65	42	0.32	1.75	TO-220
DKG40N60W	650	40	1.9	65	0.86	1.82	TO-247
DKG60N60W	650	60	2 .2	80	1.11	1.9	TO-247
DKG75N120W	1200	75	1.62	90	1.20	2.0	TO247
DKG10Nl 20P	1200	10	2.4	77	0.23	11	TO-3P
DKG15N120 W/ P	1200	15	2.10	115	0.45	12	TO-247/TO-3P
DKG25N120W / P	1200	25	2.25	98	0.82	13	TO-247/TO-3P
DKG40N1 20W	1200	40	2.25	56	1.6	30	TO-247
DKG40N1 20L	1200	40	2.2	65	1.7	27	TO-247/TO-264