Our SiC MOSFET portfolio covers voltage ratings from 750V to 1700V, delivering high switching efficiency, low power losses and reliable performance for demanding power electronics applications. Built with advanced Silicon Carbide technology, these discrete devices support higher switching frequencies, improved thermal performance and increased power density compared with conventional silicon MOSFETs. They are widely used in electric vehicle charging systems, renewable energy equipment, industrial power supplies and high-efficiency power conversion systems.
| PACKAGE | PART NO. | VODKTAGE | RDSON&18V mohm |
| TO247-4 | DK2M0016075KA | 750 | 16 |
| TO247-4 | DK2M0018075KA | 750 | 18 |
| TO247-4 | DK2M0020075KA | 750 | 20 |
| QDPAK | DK2M0020075QA | 750 | 20 |
| TO247-4 | DK2M0025075KA | 750 | 25 |
| TO247-3 | DK2M0032075DA | 750 | 32 |
| TO247-4 | DK2M0032075KA | 750 | 32 |
| TODKDK | DK2M0032075DKA | 750 | 32 |
| TODKT | DK2M0032075TA | 750 | 32 |
| TO247-4 | DK2H0032075KA(sbd) | 750 | 32 |
| TO247-4 | DK2M0040075KD | 750 | 40 |
| TO247-4 | DK2M0045075KA | 750 | 45 |
| TO247-4 | DK3M0012120KA | 1200V | 12 |
| TO247-4 | DK2M0018120KA | 1200V | 18 |
| TO247-4 | DK2M0028120KA | 1200V | 25 |
| TO247-4 | DK2M0030120KA | 1200V | 30 |
| TO247-4(细脚) | DK2M0030120K1 | 1200V | 30 |
| TO263-7 | DK2M0030120JA | 1200V | 30 |
| TO247-4 | DK1M0035120K | 1200V | 35 |
| TO247-4(细脚) | DK2M0035120K1 | 1200V | 35 |
| TO247-4 | DK2M0035120KB | 1200V | 35 |
| TO247-4 | DK2M0050120KA | 1200V | 50 |
| TO263-7 | DK2M0050120JA | 1200V | 50 |
| TO247-4 | DK2M0060120KA | 1200V | 60 |
| TO247-4 | DK2M0020150KA | 1500V | 20 |
| TO247-4 | DK2M0032150KA | 1500V | 30 |
| TO247-4 | DK2M0135150KA | 1500V | 135 |
| TO247-4 | DK2M0032170KA | 1700V | 30 |
| TO247-3 | DK2M0350170DA | 1700V | 350 |
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Our Main Products include: Rectifier Diodes & Thyristor & relevant rectifying devices; Power module, Bridge rectifier, Press-fit Diode, Solid state relay, Intelligent module, Heatsink, Welding machine device, Rectifier equipments, Switch power supply etc